Effect of carrier gas on the surface morphology of V-doped GaN layers

✍ Scribed by M. Souissi; H. Touati; A. Fouzri; A. Bchetnia; B. El Jani

• Book ID: 104051545
• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 742 KB
• Volume: 39
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/j.mejo.2008.04.004

✦ Synopsis

Vanadium-doped GaN (GaN:V) have been elaborated by metalorganic chemical vapour deposition (MOCVD). We have used vanadium tetrachloride (VCl 4 ) to intentionally incorporate vanadium (V) during the crystal growth of GaN. The films were grown on sapphire substrate with tow procedures. A series of layers were elaborated under nitrogen (N 2 ) and another under hydrogen (H 2 ). For the growth of GaN:V in hydrogen atmospheric, we have used the SiN treatment consisting of an exposure of sapphire substrate to a mixture of ammonia (NH 3 ) and silane (SiH 4 ). In-situ laser reflectometry analysis show that the surface morphology of layers depends on VCl 4 flow rate and the growth conditions. The experiments show that the quality of the grown layers (as measured with X-ray diffractometer (XRD), scanning electron microscopy (SEM) and photoluminescence (PL) increases under N 2 .