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Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN:Mg layers

โœ Scribed by W. V. Lundin; A. V. Sakharov; E. E. Zavarin; M. A. Sinitsyn; A. E. Nikolaev; G. A. Mikhailovsky; P. N. Brunkov; V. V. Goncharov; B. Ya. Ber; D. Yu. Kazantsev; A. F. Tsatsulnikov


Book ID
111444391
Publisher
Springer
Year
2009
Tongue
English
Weight
315 KB
Volume
43
Category
Article
ISSN
1063-7826

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Effect of carrier gas on the surface mor
โœ M. Souissi; H. Touati; A. Fouzri; A. Bchetnia; B. El Jani ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 742 KB

Vanadium-doped GaN (GaN:V) have been elaborated by metalorganic chemical vapour deposition (MOCVD). We have used vanadium tetrachloride (VCl 4 ) to intentionally incorporate vanadium (V) during the crystal growth of GaN. The films were grown on sapphire substrate with tow procedures. A series of lay