Influence of bismuth doping of InAs quantum-dot layer on the morphology and photoelectronic properties of Gas/InAs heterostructures grown by metal-organic chemical vapor deposition

✍ Scribed by B. N. Zvonkov; I. A. Karpovich; N. V. Baidus’; D. O. Filatov; S. V. Morozov

• Book ID: 110125826
• Publisher: Springer
• Year: 2001
• Tongue: English
• Weight: 286 KB
• Volume: 35
• Category: Article
• ISSN: 1063-7826
• DOI: 10.1134/1.1340297