𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Influence of etching condition on surface morphology of AlN and GaN layers

✍ Scribed by Kuwano, N. ;Tajima, R. ;Bohyama, S. ;Miyake, H. ;Hiramatsu, K. ;Shibata, T.


Publisher
John Wiley and Sons
Year
2004
Tongue
English
Weight
479 KB
Volume
201
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Surface and defect microstructure of GaN
✍ Z.J. Reitmeier; S. Einfeldt; R.F. Davis; Xinyu Zhang; Xialong Fang; S. Mahajan πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 875 KB

Hydrogen-etching of 6H-SiC(0001) substrates removed mechanical polishing damage and produced an array of parallel, unit cell high steps. The initial stage of AlN deposition on these etched substrates occurred via island nucleation, both on step edges and on terraces. Coalesced AlN films did not show

Growth kinetics, structure and surface m
✍ F. Bugge; A. N. Efimov; I. G. Pichugin; A. M. Tsaregorodtsev; M. A. Chernov πŸ“‚ Article πŸ“… 1987 πŸ› John Wiley and Sons 🌐 English βš– 594 KB

The gas-phase epitaxy of AlN on saphire substrates in the system Al-HCl-NH,-Ar was investigated. The uniformity and structural perfection of the layers were shown to be determined by gas dynamics in the growth zone. The growth rate of A1N-layer is proportional to AlCl concentration in the growth zon