## Abstract We grew GaN films on atomicallyβflat LiNbO~3~ substrates incorporating low temperature AlN buffer layers by pulsed laser deposition (PLD) and investigated their structural properties. The fullβwidthβatβhalf maximum (FWHM) values of the XRD 11β24 rocking curves were reduced from 0.59Β° to
β¦ LIBER β¦
Effect of AlN Buffer Layers on GaN/MnO Structure
β Scribed by S. Ito; H. Fujioka; J. Ohta; H. Takahashi; M. Oshima
- Publisher
- John Wiley and Sons
- Year
- 2003
- Tongue
- English
- Weight
- 110 KB
- Volume
- 0
- Category
- Article
- ISSN
- 1862-6351
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