GaN heteroepitaxial growth on LiNbO3(0001) step substrates with AlN buffer layers

✍ Scribed by Tsuchiya, Yousuke ;Kobayashi, Atsushi ;Ohta, Jitsuo ;Fujioka, Hiroshi ;Oshima, Masaharu

• Publisher: John Wiley and Sons
• Year: 2005
• Tongue: English
• Weight: 673 KB
• Volume: 202
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200521226

✦ Synopsis

Abstract

We grew GaN films on atomically‐flat LiNbO~3~ substrates incorporating low temperature AlN buffer layers by pulsed laser deposition (PLD) and investigated their structural properties. The full‐width‐at‐half maximum (FWHM) values of the XRD 11–24 rocking curves were reduced from 0.59° to 0.23° by the inclusion of the low temperature AlN buffer layers. The surface morphology was also improved by the insertion of the AlN buffer layers. These improvements in structural properties are quite consistent with the fact that the intermixed layer thickness at the heterointerface is reduced from 4 to 2 nm by the use of low temperature AlN. These results indicate that PLD growth on atomically‐flat substrates with AlN buffer layers is quite promising for preparing high quality GaN on LiNbO~3~ substrates. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)