Comparison of low-temperature (LT-) GaN buffer layers grown on GaAs {111} surfaces has been performed. LT-GaN buffer layers of 0-160 nm thickness were grown simultaneously both on GaAs (111)A and (111)B surfaces by metalorganic hydrogen chloride vapor phase epitaxy (MOHVPE) at 550 C. On GaAs (111)A
Annealing Effect on GaN Buffer Layer Surface
β Scribed by Halidou, I. ;Boufaden, T. ;Touhami, A. ;Rebey, A. ;El Jani, B.
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 154 KB
- Volume
- 184
- Category
- Article
- ISSN
- 0031-8965
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