The Influence of Nucleation Parameters on GaN Buffer Layer Properties Used for HEMT Application

✍ Scribed by Nastase, N. ;Hardtdegen, H. ;Schmidt, R. ;Bay, H. ;L�th, H. ;Alam, A. ;Heuken, M.

• Publisher: John Wiley and Sons
• Year: 2001
• Tongue: English
• Weight: 119 KB
• Volume: 188
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/1521-396x(200112)188:2<647::aid-pssa647>3.0.co;2-#