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The Influence of Nucleation Parameters on GaN Buffer Layer Properties Used for HEMT Application

✍ Scribed by Nastase, N. ;Hardtdegen, H. ;Schmidt, R. ;Bay, H. ;L�th, H. ;Alam, A. ;Heuken, M.


Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
119 KB
Volume
188
Category
Article
ISSN
0031-8965

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