The gas-phase epitaxy of AlN on saphire substrates in the system Al-HCl-NH,-Ar was investigated. The uniformity and structural perfection of the layers were shown to be determined by gas dynamics in the growth zone. The growth rate of A1N-layer is proportional to AlCl concentration in the growth zone and does not depend on NH, partial pressure. This is in accordance with the law of diffusional stoichiometry.
The rriorphology of AIN-layers was shown to be dependent 0 1 1 the growth rate and the substrate orientation. Smooth mirror-like layers were prepared on the sapphire planes (0001) and ( 1120) at low growth rates. X-ray microanalysis showed the oxygen irnpurity content a t the level 1 -6 . loz1 om-,.
Other impurities were not available.
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