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Growth morphology and growth mechanism of α-Al2O3 whiskers

✍ Scribed by M. Schreiner; W. Wruss; B. Lux


Publisher
Elsevier Science
Year
1983
Tongue
English
Weight
374 KB
Volume
61
Category
Article
ISSN
0022-0248

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The gas-phase epitaxy of AlN on saphire substrates in the system Al-HCl-NH,-Ar was investigated. The uniformity and structural perfection of the layers were shown to be determined by gas dynamics in the growth zone. The growth rate of A1N-layer is proportional to AlCl concentration in the growth zon