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Effect of the polar surface on GaN nanostructure morphology and growth orientation

โœ Scribed by Nam, C. Y.; Tham, D.; Fischer, J. E.


Book ID
127033075
Publisher
American Institute of Physics
Year
2004
Tongue
English
Weight
366 KB
Volume
85
Category
Article
ISSN
0003-6951

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Vanadium-doped GaN (GaN:V) have been elaborated by metalorganic chemical vapour deposition (MOCVD). We have used vanadium tetrachloride (VCl 4 ) to intentionally incorporate vanadium (V) during the crystal growth of GaN. The films were grown on sapphire substrate with tow procedures. A series of lay