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Effect of carrier concentration on the microhardness of GaN layers

โœ Scribed by S. Evtimova; B. Arnaudov; T. Paskova; B. Monemar; M. Heuken

Book ID
111558329
Publisher
Springer US
Year
2003
Tongue
English
Weight
172 KB
Volume
14
Category
Article
ISSN
0957-4522

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โœ M. Souissi; H. Touati; A. Fouzri; A. Bchetnia; B. El Jani ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 742 KB

Vanadium-doped GaN (GaN:V) have been elaborated by metalorganic chemical vapour deposition (MOCVD). We have used vanadium tetrachloride (VCl 4 ) to intentionally incorporate vanadium (V) during the crystal growth of GaN. The films were grown on sapphire substrate with tow procedures. A series of lay