The effect of Gd doping on carrier concentration in InGaAsSb layers grown by liquid phase epitaxy

✍ Scribed by L.M. Dolginov; I.V. Tunitskaya; A.Y. Polyakov; L.V. Druzhinina; G.V. Vinogradova; N.B. Smirnov; A.V. Govorkov; O.M. Borodina; E.A. Kozhukhova; A.A. Balmashnov; A.G. Milnes

• Book ID: 107864605
• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 329 KB
• Volume: 251
• Category: Article
• ISSN: 0040-6090
• DOI: 10.1016/0040-6090(94)90680-7