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The effect of silicon doping on the lattice parameter of gallium arsenide grown by liquid-phase epitaxy, vapour-phase epitaxy and gradient-freeze techniques

โœ Scribed by P.F. Fewster; A.F.W. Willoughby


Book ID
107789120
Publisher
Elsevier Science
Year
1980
Tongue
English
Weight
565 KB
Volume
50
Category
Article
ISSN
0022-0248

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