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Effect of BCl3 concentration and process pressure on the GaN mesa sidewalls in BCl3/Cl2 based inductively coupled plasma etching

✍ Scribed by D.S. Rawal; B.K. Sehgal; R. Muralidharan; H.K. Malik; Amitava Dasgupta

Book ID: 116965158
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 1022 KB
Volume: 86
Category: Article
ISSN: 0042-207X
DOI: 10.1016/j.vacuum.2012.04.018

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