Characteristics of GaN thin films by inductively coupled plasma etching with Cl2/BCl3and Cl2/Ar

✍ Scribed by G. F. Yang, P. Chen, Z. L. Wu, Z. G. Yu, H. Zhao, B. Liu, X. M. Hua, Z. L. Xie, X. Q. Xiu, P. Han, Y. Shi, R. Zhang, Y. D. Zheng

• Book ID: 113070114
• Publisher: Springer US
• Year: 2011
• Tongue: English
• Weight: 380 KB
• Volume: 23
• Category: Article
• ISSN: 0957-4522
• DOI: 10.1007/s10854-011-0577-5