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Effect of barrier process on electromigration reliability of Cu/porous low-k interconnects

โœ Scribed by Pyun, Jung Woo; Baek, Won-Chong; Im, Jay; Ho, Paul S.; Smith, Larry; Neuman, Kyle; Pfeifer, Klaus

Book ID
111871360
Publisher
American Institute of Physics
Year
2006
Tongue
English
Weight
472 KB
Volume
100
Category
Article
ISSN
0021-8979

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Reliability studies of barrier layers fo
Reliability studies of barrier layers for Cu/PAE low-k interconnects
โœ H.S. Nguyen; Z.H. Gan; Zhe Chen; V. Chandrasekar; K. Prasad; S.G. Mhaisalkar; Ni ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 405 KB

Electromigration and electrical breakdown are two of the most important concerns in the reliability of modern electronic devices. The electromigration lifetimes and electrical breakdown field (E BD ) in single damascene copper lines/ porous polyarylene ether (PAE) dielectric with different diffusion