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Dose-rate dependent electrical activation of silicon and sulphur implanted into GaAs

✍ Scribed by F.G. Moore; H.B. Dietrich

Book ID
113281978
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
380 KB
Volume
59-60
Category
Article
ISSN
0168-583X

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✍ S. Zekeng; B. Prevot; C. Schwab πŸ“‚ Article πŸ“… 1990 πŸ› Elsevier Science 🌐 English βš– 402 KB

Raman-scattering experiments were carried out on (001) GaAs implanted with 4 x 10 j: cm-: 100 keV or 8 x 101: cm ~: 110 keV Si + ions and then processed by conventional furnace annealing in the temperature range 400-900Β°C. The first-order Raman signature is found to depend strongly on both dose and