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A comparative study of deep levels created by low dose implantation of hydrogen, oxygen and silicon into MOCVD grown n-GaAs

✍ Scribed by H.H Tan; J.S Williams; C Jagadish


Book ID
113286834
Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
499 KB
Volume
106
Category
Article
ISSN
0168-583X

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