Silicon implantation of GaAs at low and medium doses: Raman assessment of the dopant activation

✍ Scribed by S. Zekeng; B. Prevot; C. Schwab

• Publisher: Elsevier Science
• Year: 1990
• Tongue: English
• Weight: 402 KB
• Volume: 5
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(90)90067-l

✦ Synopsis

Raman-scattering experiments were carried out on (001) GaAs implanted with 4 x 10 j: cm-: 100 keV or 8 x 101: cm ~: 110 keV Si + ions and then processed by conventional furnace annealing in the temperature range 400-900°C. The first-order Raman signature is found to depend strongly on both dose and annealing temperature. A careful examination of the mode intensities as a function of the annealing temperature allowed the dopant activation to be monitored. This has been confirmed quantitatively by performing a line shape analysis of the whole first-order Raman signature.