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Direct extraction of InP HBT noise parameters based on noise-figure measurement system

✍ Scribed by Jianjun Gao; Xiuping Li; Lin Jia; Hong Wang; Boeck, G.


Book ID
114660175
Publisher
IEEE
Year
2005
Tongue
English
Weight
432 KB
Volume
53
Category
Article
ISSN
0018-9480

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## Abstract A fast and accurate method to determine the noise parameters of microwave FETs, based on a new expression of the device noise figure as a function of the __Y__‐parameters and two equivalent noise temperatures, is presented. The method requires only the measured small‐signal parameters a