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A New Method to Extract Noise Parameters Based on a Frequency- and Time-Domain Analysis of Noise Power Measurements

✍ Scribed by Giannini, F.; Bourdel, E.; Pasquet, D.

Book ID
114630772
Publisher
IEEE
Year
2008
Tongue
English
Weight
435 KB
Volume
57
Category
Article
ISSN
0018-9456

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## Abstract We have developed a new method to measure noise parameters for GaAs MESFETs and HEMTs more accurately, quickly, and reproducibly than the conventional method. We also devised an improved method for automatically calculating a gate‐induced noise current, a drain‐noise current, and their