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A new method for the measurement and analysis of noise parameters for MESFETS and HEMTs (invited article)

โœ Scribed by Nishida, Masao ;Uda, Hisanori ;Harada, Yasoo

Publisher
John Wiley and Sons
Year
1993
Tongue
English
Weight
610 KB
Volume
3
Category
Article
ISSN
1050-1827

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โœฆ Synopsis

Abstract

We have developed a new method to measure noise parameters for GaAs MESFETs and HEMTs more accurately, quickly, and reproducibly than the conventional method. We also devised an improved method for automatically calculating a gateโ€induced noise current, a drainโ€noise current, and their correlation coefficient from the measurement noise and Sโ€parameters. ยฉ 1993 John Wiley & Sons, Inc.

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