## Abstract A new method for the determination of a distributed FET noise model is presented. It is based on the extraction of the intrinsic noiseβcorrelation matrix of an elemental section of the device from the device's noise figure, measured for only one sourceβimpedance state at a number of fre
A simple method for the determination of noise coefficients P, R, and C by two port noise parameters
β Scribed by Ping-Yu Chen; Shey-Shi Lu; Huei Wang
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 158 KB
- Volume
- 35
- Category
- Article
- ISSN
- 0895-2477
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β¦ Synopsis
In this paper, a simple method for the determination of noise coefficients P, R, and C by standard two-port noise parameters, F min , R N and β« opt is presented. The relation between equivalent noise resistance R N and equivalent noise conductance g n has been derived, which greatly simplifies the extraction procedure. This method has been applied to the extraction of K g /K c /K r and P/R/C from 0.15 m InGaAs PHEMT's with three different sizes at two different biases. Excellent agreement between measured and calculated noise parameters has been found. The tendency of the extracted values with respect to device size and bias is also discussed.
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