Diffusion of silicon in titanium nitride films. Efficiency of TiN barrier layers
β Scribed by K. G. Grigorov; G. I. Grigorov; M. Stoyanova; J. L. Vignes; J. P. Langeron; P. Denjean; J. Perriere
- Publisher
- Springer
- Year
- 1992
- Tongue
- English
- Weight
- 251 KB
- Volume
- 55
- Category
- Article
- ISSN
- 1432-0630
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π SIMILAR VOLUMES
Titanium monoxide films of about 100 mm thickness have been deposited onto Si (100) by reactive ion beam deposition. The established experimental conditions provided reproducibility of synthesised films. With a fcc cubic structure and a lattice parameter of 4.17 A Λ, as found by X-ray diffraction ;
A silicon nitride Γlm was deposited on an Si(100) substrate with a silicon dioxide surface layer from and NH 3 by low-pressure chemical vapour deposition under various conditions. The etching rates of the silicon SiH 2 Cl 2 nitride Γlms by bu β ered hydroΓuoric acid (BHF) were investigated using Ruth