𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Diffusion of silicon in titanium nitride films. Efficiency of TiN barrier layers

✍ Scribed by K. G. Grigorov; G. I. Grigorov; M. Stoyanova; J. L. Vignes; J. P. Langeron; P. Denjean; J. Perriere


Publisher
Springer
Year
1992
Tongue
English
Weight
251 KB
Volume
55
Category
Article
ISSN
1432-0630

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Synthesis and characterization of conduc
✍ KG Grigorov; GI Grigorov; L. Drajeva; D Bouchier; R Sporken; R Caudano πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 247 KB

Titanium monoxide films of about 100 mm thickness have been deposited onto Si (100) by reactive ion beam deposition. The established experimental conditions provided reproducibility of synthesised films. With a fcc cubic structure and a lattice parameter of 4.17 A ˚, as found by X-ray diffraction ;

Analysis of the transition layer in sili
✍ Tanaka, Koki; Tsuge, Atsuko; Takiyama, Makoto; Shimizu, Ryuichi πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 246 KB πŸ‘ 2 views

A silicon nitride Ðlm was deposited on an Si(100) substrate with a silicon dioxide surface layer from and NH 3 by low-pressure chemical vapour deposition under various conditions. The etching rates of the silicon SiH 2 Cl 2 nitride Ðlms by bu †ered hydroΓ‘uoric acid (BHF) were investigated using Ruth