Synthesis and characterization of conductive titanium monoxide films. Diffusion of silicon in titanium monoxide films

✍ Scribed by KG Grigorov; GI Grigorov; L. Drajeva; D Bouchier; R Sporken; R Caudano

• Publisher: Elsevier Science
• Year: 1998
• Tongue: English
• Weight: 247 KB
• Volume: 51
• Category: Article
• ISSN: 0042-207X
• DOI: 10.1016/s0042-207x(98)00149-3

✦ Synopsis

Titanium monoxide films of about 100 mm thickness have been deposited onto Si (100) by reactive ion beam deposition. The established experimental conditions provided reproducibility of synthesised films. With a fcc cubic structure and a lattice parameter of 4.17 A ˚, as found by X-ray diffraction ; this lattice value corresponded to an oxygen content of about 52%. The composition was confirmed by Auger electron spectroscopy based on the O-KLL/Ti-LMM integral ratio and on the observation of the fine features of the Ti-LMM peaks. The films were electrically conducting with a resistivity of 170 mV cm -1 . The low diffusivity of Si in TiO films, as estimated by RBS analysis, offers potential application in microelectronics of the conductive oxide form.