Growth and properties of TiN and TiOxNy diffusion barriers in silicon on sapphire integrated circuits

✍ Scribed by N. Kumar; M.G. Fissel; K. Pourrezaei; B. Lee; E.C. Douglas

• Publisher: Elsevier Science
• Year: 1987
• Tongue: English
• Weight: 981 KB
• Volume: 153
• Category: Article
• ISSN: 0040-6090
• DOI: 10.1016/0040-6090(87)90190-8