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Aluminium diffusion in titanium nitride films. Efficiency of TiN barrier layers

✍ Scribed by G. I. Grigorov; K. G. Grigorov; M. Stoyanova; J. L. Vignes; J. P. Langeron; P. Denjean


Publisher
Springer
Year
1993
Tongue
English
Weight
299 KB
Volume
57
Category
Article
ISSN
1432-0630

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Atomic Layer Deposition (ALD) was used for the deposition of tantalum oxide thin films in order to be integrated in microelectronic devices as barrier to copper diffusion. The influence of deposition temperature, number of cycles and precursor pulse time on the film growth was discussed. The conform