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Device quality of in situ plasma cleaning for silicon molecular beam epitaxy

✍ Scribed by W. Hansch; I. Eisele; H. Kibbel; U. König; J. Ramm

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
341 KB
Volume
157
Category
Article
ISSN
0022-0248

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The value of in situ monitoring to study growth dynamics and surface reaction kinetics in a gas source molecular beam epitaxy process is illustrated with reference to the growth of Si ®lms on Si(001) substrates using a beam of disilane (Si 2 H 6 ). By using a combination of re¯ection high-energy ele