✦ LIBER ✦
An optimized in situ argon sputter cleaning process for device quality low-temperature (T ⩽ 800°C) epitaxial silicon: bipolar transistor and pn junction characterization: W R Burger and R Reif, J appl Phys, 62, 1987, 4255–4268
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 156 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0042-207X
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