✦ LIBER ✦

Development of PECVD WNx ultrathin film as barrier layer for copper metallization

✍ Scribed by R Ecke; S.E Schulz; M Hecker; T Gessner

Book ID: 108411237
Publisher: Elsevier Science
Year: 2002
Tongue: English
Weight: 526 KB
Volume: 64
Category: Article
ISSN: 0167-9317
DOI: 10.1016/s0167-9317(02)00798-0

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Ultrathin amorphous Ti–Al film used as a

Ultrathin amorphous Ti–Al film used as a diffusion barrier for copper metallization

✍ B. T. Liu, D. Y. Zhao, J. Z. Xing, L. Yang, X. G. Zhang, J. X. Guo… 📂 Article 📅 2012 🏛 Springer 🌐 English ⚖ 464 KB

Use of WNX as the diffusion barrier for

Use of WNX as the diffusion barrier for interconnect copper metallization of InGaP-GaAs HBTs

✍ Shang-Wen Chang; Chang, E.Y.; Cheng-Shih Lee; Ke-Shian Chen; Chao-Wei Tseng; Tun 📂 Article 📅 2004 🏛 IEEE 🌐 English ⚖ 371 KB

Improved barrier properties of ultrathin

Improved barrier properties of ultrathin Ru film with TaN interlayer for copper metallization

✍ Qu, Xin-Ping; Tan, Jing-Jing; Zhou, Mi; Chen, Tao; Xie, Qi; Ru, Guo-Ping; Li, Bi 📂 Article 📅 2006 🏛 American Institute of Physics 🌐 English ⚖ 403 KB

Study of Ta–Si–N thin films for use as b

Study of Ta–Si–N thin films for use as barrier layer in copper metallizations

✍ D. Fischer; T. Scherg; J.G. Bauer; H.-J. Schulze; C. Wenzel 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 353 KB

Characteristics of PECVD grown tungsten

Characteristics of PECVD grown tungsten nitride films as diffusion barrier layers for ULSI DRAM applications

✍ Byung Lyul Park; Dae-Hong Ko; Young Sun Kim; Jung Min Ha; Young Wook Park; Sang 📂 Article 📅 1997 🏛 Springer US 🌐 English ⚖ 929 KB

Characteristics of Plasma-Treated Amorph

Characteristics of Plasma-Treated Amorphous Ta-Si-C Film as a Diffusion Barrier for Copper Metallization

✍ Fang, Jau-Shiung; Su, Wu-Jia; Huang, Meng-Shuo; Chiu, Chin-Fu; Chin, Tsung-Shune 📂 Article 📅 2013 🏛 Springer US 🌐 English ⚖ 703 KB