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Characteristics of PECVD grown tungsten nitride films as diffusion barrier layers for ULSI DRAM applications

โœ Scribed by Byung Lyul Park; Dae-Hong Ko; Young Sun Kim; Jung Min Ha; Young Wook Park; Sang In Lee; Hyeon-Deok Lee; Myoung Bum Lee; U. In Chung; Young Bum Koh; Moon Yong Lee


Book ID
107457482
Publisher
Springer US
Year
1997
Tongue
English
Weight
929 KB
Volume
26
Category
Article
ISSN
0361-5235

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Electrodeposition of CoMoP thin film as
โœ Z. Abdel Hamid; A. Abdel Aal; Ali Shaaban; H.B. Hassan ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 1008 KB

CoMoP thin films were fabricated by electrodeposition technique from citrate based bath onto Cu sheets for the application as diffusion barriers and metal capping layers in the copper interconnect technology. The study focused on the effect of (NH 4 ) 6 Mo 7 O 24 โ€ข4H 2 O concentrations in the platin