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Determination of LDD MOSFET drain resistance from device simulation

✍ Scribed by G.S Samudra; B.P Seah; C.H Ling

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

An analytical method for determining int

✍ Charvaka Duvvury; Dave Baglee; Michael Duane; Adin Hyslop; Michael Smayling; Mik 📂 Article 📅 1984 🏛 Elsevier Science 🌐 English ⚖ 549 KB

Determination of the gate-voltage depend

✍ J.A.M. Otten; F.M. Klaassen 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 176 KB

Influence of drain bias voltage on deter

✍ S.L. Chen; Jeng Gong 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 441 KB

Determination of physical mechanisms con

✍ A. Ortiz-Conde; J.J. Liou; R. Narayanan; F.J. García Sánchez 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 374 KB

An analytical method for determining int

📂 Article 📅 1984 🏛 Elsevier Science 🌐 English ⚖ 134 KB

An analytical method for determining int

📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 79 KB

back surface inversion play important roles in controlling leakage in SOS devices. A strategy for rule verification shrinks LSI layouts