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Determination of physical mechanisms contributing to the difference between drain and source resistances in short-channel MOSFETs

✍ Scribed by A. Ortiz-Conde; J.J. Liou; R. Narayanan; F.J. García Sánchez


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
374 KB
Volume
39
Category
Article
ISSN
0038-1101

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