An analytical method for determining intrinsic drain/source resistance of lightly doped drain (LDD) devices: Charvaka Duvvury, Dave Baglee, Michael Duane, Adin Hyslop, Michael Smayling and Mike Maekawa Solid St. Electron. 27 (1), 89 (1984)

• Publisher: Elsevier Science
• Year: 1986
• Tongue: English
• Weight: 79 KB
• Volume: 17
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/s0026-2692(86)80049-0

✦ Synopsis

back surface inversion play important roles in controlling leakage in SOS devices.

A strategy for rule verification shrinks LSI layouts