Nickel-silicided/Si 1Γx Ge x Schottky junctions are fabricated by annealing the deposited nickel (Ni) film on relaxed Si 0.75 Ge 0.25 layer at a temperature range of 300-900 1C for 60 s. Energy dispersive spectroscopy (EDS) was used to quantify the Ge composition in silicide/germanosilicide grains,
β¦ LIBER β¦
Determination of interface state density of PtSi/strained-Si1-xGex/Si Schottky diodes
β Scribed by S. Chattopadhyay; L. K. Bera; C. K. Maiti; S. K. Ray; P. K. Bose; D. Dentel; L. Kubler; J. L. Bischoff
- Book ID
- 110270820
- Publisher
- Springer US
- Year
- 1998
- Tongue
- English
- Weight
- 267 KB
- Volume
- 9
- Category
- Article
- ISSN
- 0957-4522
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