✦ LIBER ✦

Hole conduction characteristics of strained Si1−xGex/Si resonant tunneling diode

✍ Scribed by Y. Fu; M. Willander

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Noise characteristics of a Si/SiGe reson

✍ Yukihiko Okada; Jingming Xu; H.C. Liu; D. Landheer; M. Buchanan; D.C. Houghton 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 194 KB

Resonant tunneling of variously strained

✍ K.L. Wang; R.P. Karunasiri; J. Park; S.S. Rhee; C.H. Chern 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 534 KB

Experimental studies on the NDR of Si1−x

✍ D.X. Xu; G.D. Shen; M. Willander; F. Schäffler; J.F. Luy 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 295 KB

Monte Carlo simulation of hole transport

✍ Toshishige Yamada; D.K. Ferry 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 889 KB

Influence of substrate orientation on th

✍ Etoh, H.; Murakami, E.; Ishizaka, A.; Shimada, T.; Miyao, M. 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 356 KB

High hole mobility in strained Ge channe

✍ Masanobu Miyao; Eiichi Murakami; Hiroyuki Etoh; Kiyokazu Nakagawa; Akio Nishida 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 306 KB