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Noise characteristics of a Si/SiGe resonant tunneling diode

โœ Scribed by Yukihiko Okada; Jingming Xu; H.C. Liu; D. Landheer; M. Buchanan; D.C. Houghton

Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
194 KB
Volume
32
Category
Article
ISSN
0038-1101

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๐Ÿ“œ SIMILAR VOLUMES

Fabrication of p-well resonant tunneling
Fabrication of p-well resonant tunneling diode based on SiGe/Si and its DC-parameter extraction
โœ Chenrong Xiong; Yan Wang; Peiyi Chen; Zhiping Yu ๐Ÿ“‚ Article ๐Ÿ“… 2004 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 230 KB

Resonant tunneling diodes (RTD) are considered as one of the most promising band-gap engineering heterostructure devices for negative differential resistance (NDR) feature in the current-voltage trace. In this letter, a p-well SiGe/Si RTD is proposed and demonstrated. Its I-V relationship is obtaine