𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Simulation and analysis of a high-frequency resonant tunneling diode oscillator

✍ Scribed by Wan-Rone Liou; Jia-Chuan Lin; Mei-Ling Yeh

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
586 KB
Volume
39
Category
Article
ISSN
0038-1101

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Experimental analysis of resonant tunnel
Experimental analysis of resonant tunneling transit time using high-frequency characteristics of resonant tunneling transistors
✍ Takao Waho; Steffen Koch; Takashi Mizutani πŸ“‚ Article πŸ“… 1994 πŸ› Elsevier Science 🌐 English βš– 160 KB

We systematically estimate the resonant tunneling transit time from the high-frequency characteristics of resonant tunneling transistors. It is found that the transit time across an InGaAs/InAlAs resonant tunneling structure is more than one order of magnitude shorter than that for \(\mathrm{GaAs} /

Properties of monolithic integration of
Properties of monolithic integration of a resonant tunneling diode and a quantum well laser
✍ Hanyu Sheng; Soo-Jin Chun πŸ“‚ Article πŸ“… 1994 πŸ› Elsevier Science 🌐 English βš– 142 KB

An investigation of the electrical and optical characteristics of a resonant tunneling diode monolithically integrated with a quantum well laser is carried out. An analytic expression for the propagating model current is given in terms of the total spontaneous emission rate. The laser is pumped by t