Fabrication of p-well resonant tunneling diode based on SiGe/Si and its DC-parameter extraction
✍ Scribed by Chenrong Xiong; Yan Wang; Peiyi Chen; Zhiping Yu
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 230 KB
- Volume
- 7
- Category
- Article
- ISSN
- 1369-8001
No coin nor oath required. For personal study only.
✦ Synopsis
Resonant tunneling diodes (RTD) are considered as one of the most promising band-gap engineering heterostructure devices for negative differential resistance (NDR) feature in the current-voltage trace. In this letter, a p-well SiGe/Si RTD is proposed and demonstrated. Its I-V relationship is obtained by Keithley 4200 semiconductor parameter analyzer, and NDR feature can be observed obviously at room temperature. The obtained peak current density is 45.92 kA/cm 2 , and peak to valley current ratio (PVCR) is 2.21. Considering the influence of series resistance on the I-V relationship, the DC-parameter of RTD was extracted from the experimental data. This work is helpful to improve the performance of RTD and design of RTD-based circuits.