Hysteresis in the current-voltage curve of a resonant tunneling diode is simulated and analyzed in the quantum hydrodynamic (OHD) model for semiconductor devices. The simulations are the first to show hysteresis in the QHD equations and to confirm that bistability is an intrinsic property of the res
โฆ LIBER โฆ
Role of structure sizes in determining the characteristics of the resonant tunneling diode
โ Scribed by N.C. Kluksdahl; A.M. Kriman; D.K. Ferry
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 309 KB
- Volume
- 32
- Category
- Article
- ISSN
- 0038-1101
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We calculate the IยฑV characteristic of a tunnel junction containing resonant centers in the barrier distributed over a finite energy band and having an arbitrary location within the barrier. The onsite Coulomb interaction, U, between two electrons of opposite spin causes the IยฑV characteristic to sh