𝔖 Bobbio Scriptorium
✦   LIBER   ✦

The I-V Characteristic of Resonant Tunneling Junctions

✍ Scribed by Bahlouli, H.

Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
118 KB
Volume
179
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.

✦ Synopsis

We calculate the IΒ±V characteristic of a tunnel junction containing resonant centers in the barrier distributed over a finite energy band and having an arbitrary location within the barrier. The onsite Coulomb interaction, U, between two electrons of opposite spin causes the IΒ±V characteristic to show some peculiar features when eV 9 U. The effect of the variation of the energy bandwidth and position of the impurity levels on IΒ±V characteristics is also investigated.

πŸ“œ SIMILAR VOLUMES

Modelling of Polarization Charge-Induced
Modelling of Polarization Charge-Induced Asymmetry of I–V Characteristics of AlN/GaN-Based Resonant Tunnelling Structures
✍ K.M. Indlekofer; E. DonΓ ; J. Malindretos; M. Bertelli; M. Kočan; A. Rizzi; H. LΓΌ πŸ“‚ Article πŸ“… 2002 πŸ› John Wiley and Sons 🌐 English βš– 85 KB πŸ‘ 2 views

a, b), E. Dona `(a), J. Malindretos (b), M. Bertelli (a), M. Koc Λ‡an (a), A. Rizzi (a, c), and H. Lu Β¨th (a) (a) Institut fu Β¨r Schichten und Grenzfla Β¨chen (ISG1), Forschungszentrum Ju Β¨lich,

A Perturbation Calculation of the I-V Ch
A Perturbation Calculation of the I-V Characteristic of an Extended Josephson Junction
✍ W. Liniger; F. Odeh πŸ“‚ Article πŸ“… 1979 πŸ› Elsevier Science 🌐 English βš– 734 KB

7'he running solutions and I-V characteristic of an extended Josephson junction in a state near the ohmic regime are calculated by a perturbation method. Both the voltage-driven and current-driven cases are considered and the convergence of the perturbation procedure is proved. An integral represent