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Modelling of Polarization Charge-Induced Asymmetry of I–V Characteristics of AlN/GaN-Based Resonant Tunnelling Structures

✍ Scribed by K.M. Indlekofer; E. Donà; J. Malindretos; M. Bertelli; M. Kočan; A. Rizzi; H. Lüth

Publisher: John Wiley and Sons
Year: 2002
Tongue: English
Weight: 85 KB
Volume: 234
Category: Article
ISSN: 0370-1972
DOI: 10.1002/1521-3951(200212)234:3<769::aid-pssb769>3.0.co;2-h

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✦ Synopsis

a, b), E. Dona `(a), J. Malindretos (b), M. Bertelli (a), M. Koc ˇan (a), A. Rizzi (a, c), and H. Lu ¨th (a) (a) Institut fu ¨r Schichten und Grenzfla ¨chen (ISG1), Forschungszentrum Ju ¨lich,