Determination of the interface state density of the In/p-Si Schottky diode by conductance and capacitance–frequency characteristics

✍ Scribed by N. Tuğluoğlu; F. Yakuphanoglu; S. Karadeniz

• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 339 KB
• Volume: 393
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2006.12.035

✦ Synopsis

The electrical characterization of the In/p-Si Schottky diode has been investigated by conductance and capacitance-frequency techniques. The characteristic parameters of the interface states have been determined from the capacitance-frequency and conductance-frequency measurements. The capacitance of the In/p-Si Schottky diode decreases with increasing frequency. The increase in capacitance at lower frequencies results from the presence of interface states. The peak observed in the conductance curve of the In/p-Si diode indicates the presence of an interfacial layer in the In/p-Si Schottky barrier. The interface-state parameters, interface-state density D it and relaxation time t of the In/p-Si diode were calculated. The interface-state density was found to vary from 7.82 Â 10 12 eV À1 cm À2 in (0.53ÀE v ) eV to 8.01 Â 10 12 eV À1 cm À2 in (0.28ÀE v ) eV. Furthermore, the relaxation time was found to vary from 4.543 Â 10 À8 s in (0.53ÀE v ) eV to 4.435 Â 10 À8 s in (0.28ÀE v ) eV.