𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Analysis of frequency- and temperature-dependent interface states in PtSi/p-Si Schottky diodes

✍ Scribed by A. Sellai; Z. Ouennoughi

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
441 KB
Volume
154-155
Category
Article
ISSN
0921-5107

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Determination of the interface state den
Determination of the interface state density of the In/p-Si Schottky diode by conductance and capacitance–frequency characteristics
✍ N. Tuğluoğlu; F. Yakuphanoglu; S. Karadeniz 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 339 KB

The electrical characterization of the In/p-Si Schottky diode has been investigated by conductance and capacitance-frequency techniques. The characteristic parameters of the interface states have been determined from the capacitance-frequency and conductance-frequency measurements. The capacitance o

Analysis of frequency-dependent series r
Analysis of frequency-dependent series resistance and interface states of In/SiO2/p-Si (MIS) structures
✍ A. Birkan Selçuk; N. Tuğluoğlu; S. Karadeniz; S. Bilge Ocak 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 506 KB

In this work, the investigation of the interface state density and series resistance from capacitance-voltage (C-V) and conductance-voltage (G/oÀV) characteristics in In/SiO 2 /p-Si metal-insulator-semiconductor (MIS) structures with thin interfacial insulator layer have been reported. The thickness