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On the temperature dependence of series resistance and interface states in Al/SiO2/p-Si (MIS) Schottky diodes

✍ Scribed by D.E. Yıldız; Ş. Altındal


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
256 KB
Volume
85
Category
Article
ISSN
0167-9317

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✍ A. Birkan Selçuk; N. Tuğluoğlu; S. Karadeniz; S. Bilge Ocak 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 506 KB

In this work, the investigation of the interface state density and series resistance from capacitance-voltage (C-V) and conductance-voltage (G/oÀV) characteristics in In/SiO 2 /p-Si metal-insulator-semiconductor (MIS) structures with thin interfacial insulator layer have been reported. The thickness