On the energy distribution of interface states and their relaxation time and capture cross section profiles in Al/SiO2/p-Si (MIS) Schottky diodes

✍ Scribed by Ş. Altındal; H. Kanbur; İ. Yücedağ; A. Tataroğlu

• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 298 KB
• Volume: 85
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2008.02.001