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Determination of GaN HEMT reliability by monitoring IDSS

✍ Scribed by R. Pazirandeh; J. Würfl; G. Tränkle

Book ID
104058096
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
683 KB
Volume
50
Category
Article
ISSN
0026-2714

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Subject classification: 73.30.+y; 73.40.Kp; S7.14 Undoped AlGaN/GaN HEMTs grown on SiC substrates have recently demonstrated record output power density of 10.7 W/mm (cw) and total output power of 10 W at 10 GHz (L. F. Eastman, Joint ONR/MURI Review (5/15-16, 2001), CA (USA) [1]). In this paper, we