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Reliability study of AlGaN/GaN HEMT under electromagnetic, RF and DC stress

✍ Scribed by S. Khemiri; M. Kadi; A. Louis


Book ID
113800581
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
899 KB
Volume
51
Category
Article
ISSN
0026-2714

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Reliability analysis of AlGaN/GaN HEMT o
✍ N. Ronchi; F. Zanon; A. Stocco; A. Tazzoli; E. Zanoni; G. Meneghesso πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 790 KB

This paper report on the long-term stress (1000 h) carried out on AlGaN/GaN HEMTs processed on composite SopSiC substrate. Almost all tested devices present good device stability and promising performance. The reliability issues identified during the work are clearly related to the high levels of ga