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Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High

✍ Scribed by Denninghoff, D.J.; Dasgupta, S.; Jing Lu; Keller, S.; Mishra, U.K.

Book ID: 119941068
Publisher: IEEE
Year: 2012
Tongue: English
Weight: 472 KB
Volume: 33
Category: Article
ISSN: 0741-3106
DOI: 10.1109/LED.2012.2191134

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